Method for diffusing impurities into nitride semiconductor...

Details Method for diffusing impurities into nitride semiconductor... Method for diffusing impurities into nitride semiconductor...

C - Chemistry, Metallurgy

30

B

148/2.8

C30B 1/00 (2006.01) C30B 31/06 (2006.01) C30B 31/18 (2006.01) H01L 21/00 (2006.01) H01L 21/223 (2006.01)

Patent

CA 1037840

Abstract of the Disclosure A nitride semiconductor crystal is heated in an ammonia atmosphere and exposed to vaporized acceptor impurities to introduce the impurities into the crystal.

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