Semiconductor diffusions from ion implanted films

Details Semiconductor diffusions from ion implanted films Semiconductor diffusions from ion implanted films

H - Electricity

01

L

356/163, 356/176

H01L 21/22 (2006.01) H01L 21/225 (2006.01) H01L 29/08 (2006.01) H01L 29/36 (2006.01)

Patent

CA 1055620

ABSTRACT The doping of a semiconductor body is effected by diff- usion from a polycrystalline or amorphous layer, into which the dopant has been previously introduced by ion implantation. An adjustable doping concentration on the surface of the semi- conductor body is thus facilitated, with only a slight distur- bance of the crystal lattice of the semiconductor body.

236668

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