Method for controlling lateral doping profiles in...

Details Method for controlling lateral doping profiles in... Method for controlling lateral doping profiles in...

H - Electricity

01

L

356/164

H01L 21/265 (2006.01) H01L 21/027 (2006.01) H01L 21/266 (2006.01) H01L 21/311 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1064164

METHOD FOR CONTROLLING LATERAL DOPING PROFILES IN SEMICONDUCTOR DEVICE Abstract of the Disclosure The present invention relates to a method for making a semiconductor device. The method comprises the steps of forming a prescribed resist pattern over a body of one conductivity type and diffusing regions of a specified conductivity type in portions of the body not masked by the resist pattern whereby the regions are spaced apart laterally in the body by a distance approximately equal to the width of the resist pattern. The resist pattern is then trimmed by a predetermined amount to reduce the width thereof thereby to provide a mask member for subsequent processing of the device.

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