H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/73
H01L 27/04 (2006.01) H01L 29/10 (2006.01) H01L 29/70 (2006.01) H01L 29/80 (2006.01) H01L 29/808 (2006.01)
Patent
CA 1153479
SEMICONDUCTOR DEVICES CONTROLLED BY DEPLETION REGIONS ABSTRACT OF THE DISCLOSURE A field effect semiconductor device and method of controlling the device by merged depletion regions are provided. The device includes, in combination, first and second spaced apart PN junctions. Deple- tion regions associated with the junctions have boundaries displaced from their respective junctions as a function of the doping concentration on either side of the junctions. The junctions are spaced apart by a distance which allows overlap of the depletion regions positioned therebetween. By applying a reverse bias to one of the PN junctions the conductivity on the side of the second PN junction remote from the first PN junction can be varied through the effect of merged depletion regions. This provides in a field effect transistor device a channel and gate of the same conductivity type material. Rathar than varying the reverse bias across a gate-channel junction to control current through the channel, as is conventionally done, with the present invention it is possible to apply the reverse bias to the remote junction and with the overlapped depletion regions cause changes to the depletion region in the channel which varies the conductivity of the channel and controls current therethrough.
361470
Cardwell Walter T. Jr.
Gowling Lafleur Henderson Llp
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