Semiconductor memory element operable at high speed and with...

Details Semiconductor memory element operable at high speed and with... Semiconductor memory element operable at high speed and with...

H - Electricity

03

K

352/81

H03K 17/00 (2006.01) G11C 11/40 (2006.01) G11C 11/411 (2006.01) H03K 3/286 (2006.01) H03K 3/352 (2006.01)

Patent

CA 1052908

MEMORY CIRCUIT ABSTRACT OF THE DISCLOSURE A memory circuit comprises a semiconductor element circuit having equivalently a PNPN four-layer structure, at least an NPN transistor and a diode. An N-type emitter of the semiconductor element cir- cuit is connected to the base of the NPN transistor, while a P-type base of the circuit is connected to the collector of the NPN transistor through the diode. The semiconductor element circuit has a positive feedback loop which is additionally provided with another feedback loop extending across the P-type base and the N-type emitter of the semiconductor element circuit, whereby in the ON holding state of the memory circuit the semiconductor element circuit is operated as a current stabilizing circuit and the transistor included in the additional feedback loop is stabilized in a controlled staturation state. The memory circuit can thus be operated at a high speed with a low power consumption.

242589

Affiliated with

Also associated with

Rating

Semiconductor memory element operable at high speed and with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory element operable at high speed and with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory element operable at high speed and with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-78387