Semiconductor device having an amorphous silicon active region

Details Semiconductor device having an amorphous silicon active region Semiconductor device having an amorphous silicon active region

H - Electricity

01

L

356/153, 345/22

H01L 31/00 (2006.01) H01L 21/00 (2006.01) H01L 21/205 (2006.01) H01L 21/70 (2006.01) H01L 29/00 (2006.01) H01L 29/04 (2006.01) H01L 31/068 (2006.01) H01L 31/07 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1091361

A SEMICONDUCTOR DEVICE HAVING AN AMORPHOUS SILICON ACTIVE REGION ABSTRACT A semiconductor device including a body of amorphous silicon fabricated by a glow discharge in silane and a metallic region on a surface of the body of amorphous silicon providing a surface barrier junction at the interface of the region and the body which is capable of generating a space charge region in the body of amorphous silicon. -1-

256565

Affiliated with

Also associated with

Rating

Semiconductor device having an amorphous silicon active region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having an amorphous silicon active region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an amorphous silicon active region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-858707