Method for forming an insulator between layers of conductive...

Details Method for forming an insulator between layers of conductive... Method for forming an insulator between layers of conductive...

H - Electricity

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H01L 21/22 (2006.01) H01L 21/033 (2006.01) H01L 21/762 (2006.01) H01L 21/768 (2006.01) H01L 21/82 (2006.01) H01L 23/522 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1120608

Abstract A method for forming an insulator between conductive layers, such as highly doped polycrystalline silicon, that involves first forming a conductive layer of, for example, polycrystalline silicon on a silicon body having substantially horizontal and substantially vertical surfaces. A conformal insulator layer is formed on the substantially horizontal and sub- stantially horizontal and vertical surfaces. Reactive ion etching removes the insulator from the horizontal layer and provides a narrow dimensioned insulator on the vertical surfaces silicon body. Another conductive layer, which may be polycrystalline silicon, is formed over the insulator. The vertical layer dimension is adjusted depending upon the original thickness of the conformal insulator layer applied.

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