Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

H - Electricity

01

L

356/177, 204/96.

H01L 21/31 (2006.01) H01L 21/3105 (2006.01) H01L 21/76 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1165014

Abstract of the Disclosure A method of forming a flat field region in a semiconductor substrate, which comprises forming a recess in the substrate, forming a covering on the whole surface of the substrate with a first insulating film such as plasma CVD SiO2 film which gives a layer at the side portion of the recess more rapidly etchable as compared with other portions, selectively removing the layer at the side portion to thereby form a V-shaped groove between the side of the recess and the first insulating film, and filling the V-shaped groove with a second insulating material so as to obtain a flat field region which is flush with the surface of an element-forming region.

393269

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