G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.1
G11C 11/36 (2006.01) G11C 17/06 (2006.01) G11C 17/16 (2006.01) H01L 23/52 (2006.01) H01L 27/102 (2006.01) H01L 29/04 (2006.01)
Patent
CA 1135856
18.9.78 1 PHN.8964 "ABSTRACT": "Semiconductor device having a fixed memory and method of manufacturing such a semiconductor device". In a diode matrix of a permanent memory (ROM) one of the word line and bits line systems is formed by a system of strip-shaped zones of one con- ductivity type provided in the silicon body and in the further system is formed by polycrystalline silicon tracks of the opposite conductivity type provided on the surface and forming mono-poly p-n junctions with the strip-shaped zones. High packing density and high speed are obtained.
315429
N.v. Philips Gloeilampenfabrieken
Van Steinburg C.e.
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