Led's having isoelectrically built-in nitrogen

Details Led's having isoelectrically built-in nitrogen Led's having isoelectrically built-in nitrogen

H - Electricity

01

L

345/51

H01L 21/208 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1047636

ABSTRACT A method of manufacturing by liquid epitaxy III-V semiconductor crystals comprising a layer having isoelectronic nitrogen trapping centres. The method is characterized in that the deposition of the nitrogen- doped layer is succeeded by the deposition of a deep layer containing less nitrogen doping after which a p-n junction is formed in the first layer.

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