Method of correcting the voltage coefficient of resistors...

Details Method of correcting the voltage coefficient of resistors... Method of correcting the voltage coefficient of resistors...

H - Electricity

01

L

356/117, 356/121

H01L 27/04 (2006.01)

Patent

CA 1085063

METHOD OF CORRECTING THE VOLTAGE COEFFICIENT OF RESISTORS IMPLANTED OR DIFFUSED IN A SEMICONDUCTOR SUBSTRATE Abstract A method and structure for correcting the voltage co- efficient of resistance (VCR) of a resistor in a semicon- ductor body is described. The resistor may be diffused or ion implanted of one conductivity and formed in an isolated layer of the opposite type of conductivity. The layer is typically an epitaxial layer. A potential V1 is applied to one end of the resistor and a potential V2 being applied to the opposite end. The method provides means for controlling variations of the potential differ- ence between the resistive region and the epitaxial layer, either to minimize them or to cause the distortions gen- erated by such variations to be compensated for by equal distortions of opposite directions, such that the overall distortion will be equal to zero. There is provided cir- cuit arrangement to cause the potential of the epitaxial layer to reach a suitable value, preferably a value that varies in the same manner as the average value of the resistor whose VCR is to be corrected.

285189

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