Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/31

H01L 29/74 (2006.01) C22B 1/04 (2006.01) C22B 3/08 (2006.01) C22B 15/00 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1053377

ABSTRACT OF THE DISCLOSURE: Semiconductor device comprising a semiconductor body with four layers of alternately P- and N-conducting types, which layers constitute a thyristor, the two outermost of said layers forming emitter junctions with adjacent layers. The semiconductor body comprises an integrated field effect transistor part for bridging at least one of the emitter junc- tions. The collector and emitter of the field effect trans- istor consist of regions of the same conductivity type, one of these regions consisting of the emitter layer adjacent to the bridged emitter junction and the other region consist- ing of a region ohmically connected to the layer ajdacent to the emitter layer and of the same type of conductivity as the emitter layer.

254912

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-902783