Semiconductor floating gate storage device

Details Semiconductor floating gate storage device Semiconductor floating gate storage device

H - Electricity

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352/82.3

H01L 29/78 (2006.01) G11C 11/35 (2006.01) H01L 29/34 (2006.01) H01L 29/788 (2006.01) H01L 29/88 (2006.01)

Patent

CA 1070016

ABSTRACT: A semiconductor storage device having a field-effect transistor with a floating insulating gate electrode on which information- containing charge can be stored by tunneling charge carriers between the semiconductor body and the gate electrode. Accord- ing to the invention the recording and erasing voltage is applied between two juxtaposed surface zones of the same con- ductivity type present outside the channel region and the source and drain zones, one of the surface zones, which is preferably also the source or drain zone, being separated from the floating gate electrode by an insulating layer having a thickness of less than 0.01 micron through which charge carriers can tunnel. Recording and erasing can be carried out at low voltages and with a voltage source of the same polarity relative to a reference potential.

243214

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