Semiconductor controlled rectifier

Details Semiconductor controlled rectifier Semiconductor controlled rectifier

H - Electricity

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L

356/37

H01L 29/74 (2006.01) H01L 29/10 (2006.01) H01L 29/36 (2006.01)

Patent

CA 1159158

48,918 ABSTRACT OF THE DISCLOSURE The present invention is directed to a con- trolled rectifier comprised of four regions comprising an anode emitter region, an anode base region, a cathode base region and a cathode emitter region. In addition, the controlled rectifier of the present invention has a plur- ality of gate regions extending from a p-n junction or interface between the two base regions into the anode base region and a thin region disposed between the anode emit- ter region and the anode base region. The regions com- prising the plurality of gate regions have the same type of conductivity as the cathode base region but are doped to a higher level than the anode base region. The thin region has the same type conductivity as the anode base region but is doped to higher level than the anode base region.

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