Process for doping high purity silicon in an arc heater

Details Process for doping high purity silicon in an arc heater Process for doping high purity silicon in an arc heater

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H01L 21/64 (2006.01) C01B 33/033 (2006.01) C30B 25/02 (2006.01) H01L 21/205 (2006.01) H01L 29/167 (2006.01) H01L 31/18 (2006.01) H05B 7/18 (2006.01)

Patent

CA 1109568

PROCESS FOR DOPING HIGH PURITY SILICON IN AN ARC HEATER ABSTRACT OF THE DISCLOSURE A method for doping solar grade silicon character- ized by the steps of feeding into an arc heated gas stream a quantity of a metal reductant such as an alkali metal or an alkaline-earth metal and also feeding into the stream a quantity of a silicon halide and a corresponding halide of a doping agent such as arsenic to react with the metal reductant to produce reaction products including a salt of a metal reductant and a mixture of liquid silicon and doping agent, and separating the mixture from the salt of the metal reductant.

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