Mechanically biased semiconductor strain sensitive microphone

H - Electricity – 04 – R

Patent

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Details

349/81, 349/56.2

H04R 17/02 (2006.01) H04R 21/02 (2006.01)

Patent

CA 1131761

Abstract of the Disclosure A piezo-electric transducer element is disclosed which is formed by selected etchings from boron doped silicon. The transducer includes a diaphragm and a spring lever adapted to bias the transducer element into a state of strain so that a vibration of the diaphragm is transmitted to the transducer element. the transducer element is particularly suitable for use in a telephone microphone.

315621

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