Inverse floating gate semiconductor devices

Details Inverse floating gate semiconductor devices Inverse floating gate semiconductor devices

H - Electricity

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H01L 29/76 (2006.01) H01L 21/266 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01) H01L 29/08 (2006.01) H01L 29/788 (2006.01)

Patent

CA 1119299

INVERSE FLOATING GATE SEMICONDUCTOR DEVICES Abstract of the Disclosure An MOS stacked gate structure for an EPROM has an upper floating gate and a lower selection gate permitting shorter erasal time, lower selection gate voltage and a compact EPROM structure. - i -

320834

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