3-step etching for contact window

Details 3-step etching for contact window 3-step etching for contact window

H - Electricity

01

L

H01L 21/60 (2006.01) H01L 21/768 (2006.01) H01L 21/311 (2006.01)

Patent

CA 2238128

A 3-step etching method for contact windows in integrated circuit devices is disclosed, the first step being an anisotropic etching, the second step being an isotropic etching and the third step being an anisotropic etching, where the ratio of the etching depth formed by the third step to the total etching depth formed by said three steps is less than 0.5. The resultant contact window has a better aluminum step coverage, making more reliable electrical connections and without increasing much cost.

Affiliated with

Also associated with

Rating

3-step etching for contact window does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with 3-step etching for contact window, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and 3-step etching for contact window will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1857702