5-transistor memory cell which can be reliably read and written

Details 5-transistor memory cell which can be reliably read and written 5-transistor memory cell which can be reliably read and written

G - Physics

11

C

352/82.1

G11C 11/24 (2006.01) G11C 11/41 (2006.01) G11C 11/412 (2006.01)

Patent

CA 1260140

A 5-TRANSISTOR MEMORY CELL WHICH CAN BE RELIABLY READ AND WRITTEN ABSTRACT A five transistor memory cell that can be reliably read and written from a single data line. The cell includes two inverters and a pass transistor. The cell read/write circuitry includes an address supply voltage source which is maintained at a first level during write and at a second level during read selec- ted to reduce read disturbance. The memory cell read circuitry includes a circuit for precharging the cell data line prior to read. The state of the memory cell is continuously available at output nodes to control other circuitry even during the read operation.

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