A.c. solid state relay circuit and thyristor structure

Details A.c. solid state relay circuit and thyristor structure A.c. solid state relay circuit and thyristor structure

H - Electricity

03

K

323/10, 328/195

H03K 17/725 (2006.01) H01L 27/144 (2006.01) H01L 31/111 (2006.01) H03K 17/082 (2006.01) H03K 17/13 (2006.01) H03K 17/16 (2006.01) H03K 17/78 (2006.01) H03K 17/79 (2006.01)

Patent

CA 1237170

A.C. SOLID STATE RELAY CIRCUIT AND THYRISTOR STRUCTURE ABSTRACT OF THE DISCLOSURE A solid state a.c. relay has two separate and iden- tical power thyristors connected in anti-parallel arrangement. The power thyristors are each optically switched, lateral con- duction devices with anode and cathode electrodes on the same surface. Both are switched by illuminating their surface by reflected illumination from an LED. Each thyristor is pro- vided with a respective control circuit which includes a MOS- FET transistor for clamping its respective thyristor gate whenever the voltage across the thyristor exceeds a given absolute value or whenever there is a high dV/dt transient across the thyristor. The control circuit for the control transistor includes a capacitance divider, one element of which is the distributed capacitance of the control transis- tor; a resistor and a zener diode. The control circuit com- ponents are integrated into the thyristor chips. Each of the two identical power chips and the LED chip are spaced from one another and mounted on an alumina substrate. Two lead wires are stitch-bonded to the electrode pads of the two chips to connect them in anti-parallel relation, and are then stitch-bonded to two respective conductive sections on the alumina substrate. Each thyristor consists of a plural- ity of individual lateral thyristor elements connected in parallel. Each element has an active base region which con- tains a respective cathode region. Each of the base regions is carried in a common conductivity type body. Extending fingers of a continuous anode electrode partly enclose each individual base region to enable the parallel connection of the individual devices. The thyristor base and emitter zones are surrounded by an auxiliary P region which is resistively connected to a field plate and the cathode electrode to im- prove emitter collection efficiency. The cathode electrode and anode electrode are interdigitated. The cathode electrode is connected to spaced, parallel, generally rectangular emit- ter regions which are disposed in respective bases between loops of the cathode electrode.

443824

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