A capacitive pressure sensor having a reduced area...

Details A capacitive pressure sensor having a reduced area... A capacitive pressure sensor having a reduced area...

G - Physics

01

L

G01L 9/12 (2006.01) G01L 9/00 (2006.01)

Patent

CA 2182180

A silicon capacitive pressure sensor is disclosed that has a glass dielectric material sputter-disposed onto a silicon substrate of the sensor. After deposition of the bulk dielectric material, the glass is patterned and etched to form a pair of concentric rings. An inner ring is of a circular shape, while the outer ring is of an octagonal shape. As compared to prior art dielectric spacers which are of a single ring of relatively wide thickness, the pair of concentric rings disclosed herein significantly reduce the parasitic capacitance of the glass dielectric material, thereby increasing the sensitivity of the sensor.

Capteur de pression capacitif au silicium comprenant une matière diélectrique en verre déposée par pulvérisation cathodique sur un substrat au silicium (140) du capteur. Après avoir déposé la matière électrique en vrac, on façonne le verre et on le grave pour former une paire d'anneaux concentriques. L'anneau intérieur (141) présente une forme circulaire, alors que l'anneau extérieur (142) présente une forme octogonale. Comparés aux éléments d'écartement diélectriques de l'art antérieur qui sont constitués d'un seul anneau relativement épais, les deux anneaux concentriques de cette invention réduisent considérablement la capacité parasite de la matière diélectrique en verre, ceci améliorant la sensibilité du capteur.

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