A clocked high voltage switch

Details A clocked high voltage switch A clocked high voltage switch

H - Electricity

01

L

H01L 29/772 (2006.01) H01L 27/088 (2006.01) H01L 29/06 (2006.01) H01L 29/423 (2006.01) H02M 3/137 (2006.01) H03K 17/10 (2006.01) H03K 17/687 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2209295

The present invention discloses methods and apparatus for implementing a clocked high voltage switch involving MOS devices (M1-M19). The switching is from a high voltage source typically at 21V to ground. An intermediate voltage source typically at 11V is introduced for reducing the gated breakdown voltage requirement to approximately 10V. This reduced gated breakdown voltage requirement is easily met by special layout methods applied to various transistors in the circuit (M1-M3, M5-M6, M8-M13). The basic layout methods include the terminating of the field implant region near the N+P junction to expose the N+ diffusion over the P substrate to increase the junction breakdown and the gated diode breakdown, and the use of short channel length to reduce the threshold voltage.

Cette invention a trait à des procédés et à l'appareil correspondant permettant la mise en oeuvre d'un commutateur de haute tension cadencé faisant intervenir des dispositifs MOS (M1-M19). La commutation provient d'une source haute tension, généralement à 21 volts vers la terre. On introduit une source de tension intermédiaire, généralement à 11 volts vers la terre, pour réduire la demande de tension de claquage commandée par grille à approximativement 10 volts. Il est possible de satisfaire facilement cette demande de tension de claquage commandée par grille grâce à l'application de techniques d'implantation spéciales à divers transistors dans le circuit (M1-M3, M5-M6, M8-M13). Les techniques d'implantation de base comportent, d'une part le raccordement de la région d'implant sous couche proche de la jonction N+P dans le but d'exposer la diffusion N+ au-dessus du substrat P afin d'accroître le claquage de jonction et le claquage de diode commandé et, d'autre part, l'utilisation d'un canal court pour réduire la tension de seuil.

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