G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 7/00 (2006.01) G03F 7/20 (2006.01)
Patent
CA 2329539
An improved compact tandem photon and electron beam lithography system includes a field lens adjacent the photoemission source which is utilized in combination with an objective lens to minimize field aberrations in the usable emission pattern and minimize the interaction between electrons to improve the throughput of the system. If desired, a demagnifying lens can be utilized between the field lens and the objective lens to increase the demagnification ratio of the system.
L'invention concerne un système amélioré compact de lithographie par faisceaux électroniques et photoniques en tandem, comprenant un verre de champ adjacent à la source d'émission photoélectrique, laquelle est utilisée combinée avec un objectif de façon à réduire, d'une part, les aberrations de champ dans la configuration de l'émission utilisable et, d'autre part, les interactions entre les électrons afin d'améliorer le rendement du système. Il est possible d'utiliser un objectif de réduction entre le verre de champ et l'objectif pour augmenter le coefficient de réduction du système.
Mankos Marian
Veneklasen Lee H.
Etec Systems Inc.
Osler Hoskin & Harcourt Llp
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