A composition and method for selectively etching a silicon...

C - Chemistry – Metallurgy – 09 – K

Patent

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C09K 13/04 (2006.01) C09K 13/08 (2006.01) C30B 33/10 (2006.01) H01L 21/311 (2006.01)

Patent

CA 2279786

The invention relates to an aqueous phosphoric acid etch bath composition with a readily soluble silicon containing composition. The baths are used in the etching step of composite semiconductor device manufacturing.

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