A controlled cleavage process

Details A controlled cleavage process A controlled cleavage process

H - Electricity

01

L

H01L 21/425 (2006.01) B26D 3/28 (2006.01) B26F 3/00 (2006.01) H01L 21/02 (2006.01) H01L 21/20 (2006.01) H01L 21/265 (2006.01) H01L 21/304 (2006.01) H01L 21/762 (2006.01) H01L 27/12 (2006.01)

Patent

CA 2290104

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Technique permettant de former une couche de matériau (12) à partir d'un substrat donneur (10). La technique comprend une étape consistant à introduire sélectivement des particules énergétiques (22), à travers la surface d'un substrat donneur (10), jusqu'à une profondeur sélectionnée (20) sous la surface, où les particules ont une concentration relativement élevée, de façon à définir un matériau substrat donneur (12) au-dessus de la profondeur sélectionnée et un motif au niveau de ladite profondeur. On dirige une source d'énergie, telle qu'un fluide sous pression, sur une zone sélectionnée du substrat donneur (10), de façon à amorcer un clivage contrôlé de ce dernier à la profondeur sélectionnée (20). Le processus de clivage génère ensuite un front de clivage, qui se propage et libère ainsi le matériau donneur de la partie restante dudit substrat.

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