A de-tuned distributed feedback laser diode

Details A de-tuned distributed feedback laser diode A de-tuned distributed feedback laser diode

H - Electricity

01

S

H01S 5/00 (2006.01) H01S 5/026 (2006.01) H01S 5/50 (2006.01) H01S 5/0625 (2006.01) H01S 5/10 (2006.01)

Patent

CA 2454651

A semiconductor laser (10) that includes a feedback laser section (12) and an amplifier section (14). The feedback laser section (12) generates a laser beam that has a maximum intensity at a first wavelength. The amplifier section (14) amplifies the laser beam into a high powered beam. The amplifier section (14) is constructed to have a peak optical gain located at a second wavelength that is offset from the first wavelength. Offset the wavelength generated in the feedback laser section (12) from the peak gain wavelength of the amplifier section (14) will result in an output beam that has a much broader linewidth that the feedback section (12) alone. The broader linewidth is relatively stable even when part of the light reflects back into the semiconductor laser (10).

L'invention porte sur un laser à semi-conducteur comportant une section de laser à rétroaction et une section d'amplification. La section de laser à rétroaction produit un faisceau laser présentant une intensité maximale pour une première longueur d'onde, que la section d'amplification transforme en faisceau de forte puissance. La section d'amplification présente un pic de gain optique pour une deuxième longueur d'onde décalée par rapport à la première. Ce décalage donne un faisceau de sortie présentant une largeur de raie beaucoup plus étendue que celle de la section de laser à rétroaction seule. Ladite largeur de raie est relativement stable même si une partie de la lumière se rétro-reflète dans le laser à semi-conducteur.

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