C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
C04B 35/56 (2006.01) C04B 35/565 (2006.01) C04B 35/64 (2006.01) C04B 35/60 (1990.01)
Patent
CA 2126566
2126566 9313031 PCTABS00024 A process for the production of dense polycrystalline silicon carbide shaped articles, includes the steps: (a) heating a powder compact containing silicon carbide and alumina or a precursor thereof together with a secondary sintering assist, to an intermediate temperature for an extended dwell, and then (b) heating the product of step (a) to a higher temperature for sufficient time to produce a dense polycrystalline silicon carbide product. The secondary sintering assist comprises one or more rare earths or their precursors, for example scandia, yttria or dysprosia.
Oh Chull H.
Rigopoulos Nick
Trigg Mark B.
Commonwealth Scientific And Industrial Research Organisation
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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