H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/205 (2006.01) C23C 16/458 (2006.01) C30B 25/10 (2006.01) C30B 25/12 (2006.01) H01L 21/00 (2006.01) C23C 16/44 (2006.01)
Patent
CA 2440366
A device for epitaxially growing objects by Chemical Vapour Deposition on substrates (13) comprises a casing (2) defining a room (5) for receiving a holder (11) carrying a plurality of substrates and adapted to be rotated about a substantially vertical axis as well as means for rotating said holder during the growth. The device has also means (10) for feeding a gas mixture for the growth into said room through an inlet (9) being directed substantially along said vertical axis and means (15) for heating said gas mixture inside said room for decomposition thereof and depositing of articles so formed on the substrate for growing layers thereon in a substantially vertical direction for said growth. The room (5) is delimited by a susceptor having fixed walls (7, 8) of a substantial thickness. The heating means (15) is adapted to heat the susceptor walls for heating said gas mixture substantially through radiation from the hot susceptor walls.
L'invention concerne un dispositif permettant la croissance épitaxiale d'objets par dépôt chimique en phase vapeur (CVD) sur des substrats (13). Ce dispositif comprend un boîtier (2) définissant un espace (5) destiné à recevoir un support (11) portant une pluralité de substrats et conçu pour tourner autour d'un axe sensiblement vertical, ainsi qu'un moyen permettant la rotation de ce support pendant la croissance. Le dispositif comprend également un moyen d'alimentation (10) permettant de céder à cet espace un mélange gazeux destiné à la croissance par une entrée (9) qui est dirigée sensiblement le long de cet axe vertical et un moyen (15) permettant de chauffer ce mélange gazeux dans l'espace en vue de le décomposer et de déposer des articles ainsi formés sur le substrat pour la croissance de couches dessus dans une direction sensiblement verticale. L'espace (5) est délimité par un suscepteur ayant des parois fixes (7, 8) d'une épaisseur notable. Le moyen de chauffage (15) est conçu pour chauffer les parois du suscepteur pour chauffer le mélange gazeux sensiblement par rayonnement émanant des parois chaudes du suscepteur.
Hallin Christer
Liu Yuijing
Lofgren Peter
Zhou Gang
Abb Research Limited
Battison Williams Dupuis
Cree Inc.
LandOfFree
A device for epitaxially growing objects by cvd does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with A device for epitaxially growing objects by cvd, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A device for epitaxially growing objects by cvd will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1383673