A double gate metal-oxide-semiconductor structure for...

Details A double gate metal-oxide-semiconductor structure for... A double gate metal-oxide-semiconductor structure for...

H - Electricity

01

L

H01L 29/167 (2006.01) G06N 99/00 (2010.01) H01L 29/66 (2006.01)

Patent

CA 2611616

" In this patent , we investigate a scheme for the control of the hyperfine interaction between a conduction electron and a P impurity nuclear spin in a symmetric metal-oxide-semiconductor structure with face-to-face gate oxide layers. We solve Poisson's equation for the device electronics and Schrodinger's equation for the quantum states in the silicon layer by taking into account the effective mass anisotropy around each of the six degenerate minima in the silicon conduction band. We show that the double gate device provides bettre performances, in terms of bettre wavefunction amplitude modulation and consequently higher nuclear magnetic resonance frequency than in single gate devices for relatively short impurity distances from the oxide layers. "

Affiliated with

Also associated with

Rating

A double gate metal-oxide-semiconductor structure for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with A double gate metal-oxide-semiconductor structure for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A double gate metal-oxide-semiconductor structure for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1938185