A field effect transistor of sic for high temperature...

Details A field effect transistor of sic for high temperature... A field effect transistor of sic for high temperature...

H - Electricity

01

L

H01L 29/78 (2006.01) F02D 35/00 (2006.01) H01L 21/336 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2370869

A field effect transistor of SiC for high temperature application has the source region layer (4), the drain region layer (5) and the channel region layer (6, 7) vertically separated from a front surface (14), where a gate electrode (12) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from tre atmosphere.

L'invention concerne un transistor à effet de champ à base de SiC destiné à des applications haute température, la couche zone de la source (4), la couche zone du drain (5) et la couche zone du canal (6, 7) de ce transistor étant verticalement séparées d'une surface avant (14), sur laquelle est aménagée une électrode de commande (12). Cette électrode de commande, qui fait diminuer l'intensité du champ électrique sur cette surface lorsque le transistor fonctionne, fait donc office de détecteur de gaz et permet à toutes les électrodes, à l'exception de l'électrode de commande, d'être protégées de l'atmosphère.

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