A gated store buffer for an advanced microprocessor

G - Physics – 06 – F

Patent

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Details

G06F 12/10 (2006.01) G06F 9/312 (2006.01) G06F 9/318 (2006.01) G06F 9/38 (2006.01)

Patent

CA 2270122

A gated store buffer including circuitry for temporarily holding apart from other memory stores all memory stores sequentially generated during a translation interval by a host processor translating a sequence of target instructions into host instructions, circuitry for transferring memory stores sequentially generated during a translation interval to memory if the translation executes without generating an exception, circuitry for indicating which memory stores to identical memory addresses are most recent in response to a memory access at the memory address, and circuitry for eliminating memory stores sequentially generated during a translation interval if the translation executes without generating an exception.

L'invention concerne une mémoire tampon à déclenchement périodique qui inclut un circuit permettant d'isoler momentanément d'autres données-mémoire, toutes les données-mémoire générées séquentiellement, pendant un intervalle de traduction, par un processeur hôte traduisant une séquence d'instructions cibles en instructions hôtes. La mémoire tampon inclut aussi un circuit pour transférer en mémoire des données-mémoire générées séquentiellement pendant un intervalle de traduction, lorsque la traduction s'est effectuée sans générer une exception. La mémoire tampon inclut en outre un circuit pour indiquer quelles données-mémoire sont plus récentes par rapport à des adresses mémoires identiques en réponse à un accès mémoire à l'adresse mémoire, et un circuit pour éliminer des données-mémoire générées séquentiellement pendant un intervalle de traduction lorsque la traduction s'est effectuée sans générer une exception.

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