A laser diode and method of manufacture of the diode using a...

Details A laser diode and method of manufacture of the diode using a... A laser diode and method of manufacture of the diode using a...

C - Chemistry, Metallurgy

30

B

C30B 29/64 (2006.01) C30B 29/38 (2006.01) H01L 21/328 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2667783

Laser diodes are fabricated by growing epitaxial layers and forming electrodes on a low dislocation density GaN single crystal substrates which are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Threading dislocations appearing on the surface of the GaN substrate mainly extend in parallel to the surface. The resonator mirrors are made by natural cleavage.

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