H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/335 (2006.01) H01L 21/338 (2006.01) H01L 29/24 (2006.01) H01L 29/772 (2006.01) H01L 29/78 (2006.01) H01L 29/812 (2006.01)
Patent
CA 2361752
A lateral field effected transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the source region layer and the drain region layer for conducting a current between these layers in the on-state of the transistor, and a gate electrode (9) arranged to control the channel layer to be conducting or blocking through varying the potential applied to the gate electrode. A highly doped p-type base layer (12) is arranged next to the channel layer at least partially overlapping the gate electrode and being at a lateral distance to the drain region layer. The base layer is shorted to the source region layer.
L'invention concerne un transistor à effet de champ latéral de SiC permettant des fréquences de commutation élevées et comprenant une couche zone source (5) et une couche zone drain (6) espacée latéralement et hautement dopée de type N, une couche canal de type N (4) s'étendant latéralement et reliant la couche zone source et la couche zone drain afin de conduire un courant entre ces deux couches lorsque le transistor est en état passant, et une gâchette (9) conçue pour commander la couche canal afin que celle-ci soit conductrice ou bloquante lorsqu'on fait varier le potentiel appliqué à la gâchette. Une couche de base hautement dopée de type P (12) est située près de la couche canal, recouvrant au moins en partie la gâchette, et à une distance latérale de la couche drain. La couche de base est en court-circuit avec la couche zone source.
Harris Christopher
Konstantinov Andrei
Acreo Ab
Cree Sweden Ab
Sim & Mcburney
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