C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 28/00 (2006.01) B05D 5/00 (2006.01) C03C 17/36 (2006.01) G02B 5/20 (2006.01)
Patent
CA 2086177
A low emissivity film comprises a coating of an oxide film, a metal film, an oxide film and so on alternately formed on a substrate in this order in a total of (2n+1) layers where n is an integer being equal to or more than 1, wherein an oxide film (B) formed on the side opposite to a metal film (A) being most remote from the substrate in view from the substrate, contains at least one layer of a zinc oxide film doped with at least one selected from the group consisted of Si, Ti, Cr, B, Mg, Sn and Ga by 1 through 10 atomic % with respect to a total amount including Zn.
Ando Eiichi
Miyazaki Masami
Asahi Glass Company Ltd.
Smart & Biggar
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