G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 6/132 (2006.01) C23C 16/40 (2006.01) C23C 16/50 (2006.01) C23C 16/509 (2006.01) C23C 16/52 (2006.01) G02B 6/13 (2006.01)
Patent
CA 2231373
There is disclosed a method of constructing photosensitive waveguides on silicon wafers through the utilisation of a Plasma Enhanced Vapour Deposition (PECVD) system. The deposition is utilised to vary the refractive index of resulting structures when they have been subject to Ultra Violet (UV) post processing.
Cette invention concerne un procédé de construction de guides d'ondes photosensibles sur des tranches de silicium qui consiste à utiliser un dispositif de dépôt en phase vapeur activé par plasma (PECVD). On utilise ledit dépôt pour faire varier l'indice de réfraction des structures résultantes lorsque celles-ci sont soumises à un traitement ultérieur aux ultraviolets (UV).
Bazylenko Michael V.
Chu Pak Lim
Gross Mark
Moss David
Marks & Clerk
Unisearch Limited
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