C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/34 (2006.01) C23C 16/458 (2006.01) C23C 16/46 (2006.01) H01L 21/205 (2006.01) C23C 16/44 (2006.01)
Patent
CA 2173480
Titanium nitride film is deposited upon a semi- conductor substrate (13) by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at tem- peratures less than 550 °C. This is accomplished by min- imizing the boundary layer thickness (25) over the sub- strate (13).
Un film de nitrure de titane est déposé sur un substrat (13) à semi-conducteurs par le dépôt chimique en phase gazeuse de tetrachlorure de titane, d'ammoniaque et d'un diluant, à des températures inférieures à 550 ~C. On effectue ce procédé en réduisant au minimum l'épaisseur de la couche limite (25) sur le substrat (13).
Foster Robert F.
Hillman Joseph T.
Macrae & Co.
Tokyo Electron Limited
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