A method for evaluating umg silicon compensation

Details A method for evaluating umg silicon compensation A method for evaluating umg silicon compensation

G - Physics

01

N

G01N 27/04 (2006.01) H01L 21/66 (2006.01)

Patent

CA 2673621

The present invention relates to a method for the determination of boron (B) and phosphorus (P) concentration in high purity silicon feedstock (5N). More particularly, it is a method applicable for the evaluation of initial dopant compensation in Upgraded Metallurgical Grade silicon (UMG-Si). Using the resistivity (or conductivity) of a directionally solidified ingot made with a particular feedstock batch, the residual resistivity at p/n transition is measured. The resistivity at p/n transition is only related to the amount of compensation in the material and, since of acceptor (N a) is equal to the amount of donor (N d) at that particular location, initial concentration in the feedstock may be calculated by the help of Scheil's equation.

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