A method for fabricating a semiconductor photonic integrated...

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H01S 3/102 (2006.01) G02F 1/025 (2006.01) H01L 27/14 (2006.01) H01S 5/227 (2006.01) H01S 5/026 (2006.01) H01S 5/0625 (2006.01) H01S 5/20 (2006.01) H01S 5/343 (2006.01) H01L 33/00 (2006.01) H01S 3/025 (1995.01) H01S 3/085 (1995.01) H01S 3/18 (1995.01)

Patent

CA 2139140

According to a method for fabricating a semiconductor photonic integrated circuit of the invention, a light-waveguide layer and a clad layer are provided on a longitudinal aperture by an epitaxial growth technique using a relatively-low growth pressure. In contrast with those layers, a quantum-well- structure layer is selectively provided on the longitudinal aperture by an epitaxial growth technique using a relatively-high growth pressure.

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