C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/36 (2006.01) C23C 16/32 (2006.01) H01L 49/00 (2006.01)
Patent
CA 2356229
An organic silicon gas having Si-H bond and Si-C bond is supplied onto a Si-contained base material, to form a SiC film on a main surface of the base material. Moreover, An organic silicon gas having Si-H bond and Si-C bond is supplied onto a Si-contained base material, to form a SiC underfilm. Then, a SiC film is formed on the SiC underfilm to fabricate a SiC mufti-layered film structure.
Nakazawa Hideki
Suemitsu Maki
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
Tohoku University
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