A method for generation of electrical conducting or...

H - Electricity – 01 – L

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H01L 21/26 (2006.01) H01L 21/768 (2006.01) H01L 21/822 (2006.01) H01L 51/40 (2006.01)

Patent

CA 2319428

In a method for generating electrical conducting or semiconducting structures in three dimensions in a matrix which comprises two or more materials in spatially separate material structures, each material structure is irradiated with a radiation of a given intensity and/or frequency characteristic adapted to the material's response thereto, the radiation being modulated spatially according to a determined protocol which represents a predetermined pattern of electrical conducting or semiconducting structures in the relevant material structure and in response to the irradiation two-dimensional electrical conducting or semiconducting structures with a predetermined pattern are generated in the material structure such that the matrix comprised by the material structures is provided with electrical conducting or semiconducting structures in three dimensions. In a method for erasing electrical conducting or semiconducting structures of this kind each material structure is irradiated in a corresponding manner as in the generation of the structures, but such that the two-dimensional electrical conducting or semiconducting structures which are present in the material structure in response to the radiation are erased and the material in the structure in its entirety transfers to an electrical non-conducting state.

La présente invention concerne un procédé permettant la génération de structures tridimensionnelles électroconductrices ou semi-conductrices dans une matrice constituée d'au moins deux matériaux appartenant à des structures matérielles spatialement séparées. Le procédé consiste à soumettre chaque structure matérielle à un rayonnement d'une intensité spécifique adaptée à la réaction du matériau à une irradiation spatialement modulée en fonction d'un protocole déterminé permettant de représenter un tracé spécifique de structures électroconductrices et semi-conductrices dans la structure matérielle considérée. Cette irradiation aboutit à la génération de structures bidimensionnelles électroconductrices ou semi-conductrices à même la structure matérielle de façon, ce qui fait que la matrice faite des structures matérielles est pourvue de structures tridimensionnelles électroconductrices ou semi-conductrices. L'invention concerne également un procédé permettant d'effacer des structures électroconductrices ou semi-conductrices de cette sorte. Ce procédé consiste à soumettre à irradiation chacune des structures matérielles d'une manière correspondant à ce qui a été fait pour la génération des structures, mais en faisant de sorte que les structures bidimensionnelles électroconductrices ou semi-conductrices présentes dans la structure matérielle soient effacées en réaction à l'irradiation, et que la structure reprenne dans sa totalité un état non électroconducteur.

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