C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/48 (2006.01) C30B 31/06 (2006.01) C30B 33/00 (2006.01) H01L 21/385 (2006.01)
Patent
CA 2348124
This invention relates to a method for the heat treatment of a ZnSe crystal substrate to dope it with Al as a donor impurity, a ZnSe crystal substrate prepared by this heat treatment and a light-emitting device using the ZnSe crystal substrate, in particular, the method for the heat treatment of a ZnSe crystal substrate comprising previously forming an Al film on the sub- strate, first subjecting the substrate to a heat treatment in a Se atmosphere and then subjecting to a heat treatment in a Zn atmosphere.
Fujiwara Shinsuke
Namikawa Yasuo
Marks & Clerk
Sumitomo Electric Industries Ltd.
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