A method of differential etching of the subterranean fracture

E - Fixed Constructions – 21 – B

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E21B 43/27 (2006.01)

Patent

CA 2712229

The present invention relates to the stimulation of wells penetrating subterranean formations. A method of differ-ential etching of the subterranean fracture wherein nonuniform deposition of a masking material on the fracture surface or face is provided; subsequent treatment by an acid or a reactive fluid generates a heterogeneous etch pattern on the fracture surface, the etch pattern is largely influenced by the placement geometry of the masking material upon closure these irregularities provide mis-match of geometry that leave open conductive channel in the fracture.

La présente invention concerne la stimulation de puits pénétrant dans des formations souterraines, et plus précisément un procédé d'attaque chimique différentielle d'une fracture souterraine comprenant le dépôt non uniforme d'un matériau de masquage sur la surface ou face de la fracture et un traitement ultérieur à l'aide d'un acide ou d'un fluide réactif engendrant un motif hétérogène d'attaque chimique sur la surface de la fracture, ledit motif d'attaque chimique étant dans une large mesure influencé par la géométrie de mise en place du matériau de masquage. Au moment de la fermeture, ces irrégularités forment des discontinuités de géométrie qui laissent des canaux de communication ouverts dans la fracture.

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