A method of producing an ohmic contact and a semiconductor...

Details A method of producing an ohmic contact and a semiconductor... A method of producing an ohmic contact and a semiconductor...

H - Electricity

01

L

H01L 29/45 (2006.01) H01L 21/04 (2006.01) H01L 21/28 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2210222

In a method of producing an ohmic contact (5) to a p-type .alpha.-SiC layer (3b) in a semiconductor device (1), layers of aluminium, titanium and silicon are deposited on said .alpha.-SiC layer (3b), and said deposited layers (5) are annealed to convert at least part of said deposited layers (5) to aluminium-titanium-silicide.

Cette invention concerne un procédé de fabrication d'un contact ohmique (5) pour une couche .alpha.-SiC de type p (3b) dans un dispositif à semi-conducteur (1). Des couches d'aluminium, de titane et de silicium sont déposées sur ladite couche .alpha.-SiC (3b). Les couches déposées (5) sont ensuite soumises à un recuit afin qu'elles (5) soient, au moins en partie, converties en siliciure d'aluminium et de titane.

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