H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/316 (2006.01) H01L 21/312 (2006.01) H01L 21/314 (2006.01)
Patent
CA 2167085
A method of treating a semi-conductor wafer is described in which a short-chain polymer is deposited on the wafer to planarise surface features on the wafer and a diffusion layer is deposited on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.
On décrit un procédé de traitement d'une galette semi-conductrice où un polymère à chaîne courte est déposé sur la galette, pour que les caractéristiques de surface de cette galette affleurent une surface plane, et où une couche de diffusion est déposée sur cette surface de couche polymère pour que ce polymère diffuse son humidité à un rythme contrôlé.
Dobson Christopher David
Kiermasz Adrian
Mcfadden Fincham
Trikon Equipments Limited
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