A method of treating a semiconductor wafer

H - Electricity – 01 – L

Patent

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H01L 21/316 (2006.01) B05D 7/24 (2006.01) C23C 16/56 (2006.01) H01L 21/00 (2006.01) H01L 21/312 (2006.01)

Patent

CA 2137928

This invention relates to a method of treating a semicon- ductor wafer and in particular, but not exclusively, to planarisa- tion. The method consists of depositing a liquid short-chain po- lymer formed from a silicon containing gas or vapour. Subse- quently water and OH are removed and the layer is stabilised.

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