A method to gaas based lasers and a gaas based laser

H - Electricity – 01 – L

Patent

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H01L 21/302 (2006.01) H01L 21/318 (2006.01) H01L 21/461 (2006.01) H01L 27/15 (2006.01) H01L 31/12 (2006.01) H01S 5/00 (2006.01) H01S 5/028 (2006.01) H01S 5/12 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2456142

The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.

L'invention concerne un procédé d'utilisation de décapage au plasma ayant pour objet de nettoyer les impuretés sur les surfaces d'un matériau choisi dans le groupe constitué par GaAs, GaAlAs, InGaAsP, et InGaAs afin d'obtenir des couches de nitrure sur des structures arbitraires de lasers GaAs ; l'invention concernant en outre un laser GaAs fabriqué selon le procédé de l'invention. La surface du laser contient un masque qui cache les parties extérieures de sa surface pour les protéger du décapage au plasma. Le laser est ensuite placé sous vide. Par ailleurs, le décapage au plasma est réalisé au moyen d'une substance choisie dans le groupe contenant: des gaz chimiquement réactifs, des gaz inertes, et un mélange de gaz chimiquement réactifs et de gaz inertes. La couche de nitrure natif est obtenue au moyen de plasma contenant de l'azote. Une couche protectrice et/ou un revêtement miroir est également ajouté.

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