A microwave switch and method of operation thereof

H - Electricity – 01 – P

Patent

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Details

H01P 1/10 (2006.01) H01P 1/12 (2006.01) H01P 5/02 (2006.01) H03H 2/00 (2006.01) H03K 17/92 (2006.01)

Patent

CA 2251517

An HTS microwave circuit has two layers formed with metallic film on a substrate. One layer has a first circuit and another layer has a second circuit, the two circuits being coupled to one another. The second circuit has elements that are incompatible with HTS material such as MEMS technology and flip-chip technology. A microwave switch has a first layer that can carry an RF signal and a second layer that has switch elements that are controlled by a DC signal. The RF signal and DC signal are isolated from one another. The switch elements include various technologies including a narrow HTS strip. A single layer HTS microwave switch can also be utilized where the switch element is a narrow HTS line. A method of combing HTS technology with incompatible technologies into one device is provided.

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