A polysilicon resistor and a method of manufacturing it

Details A polysilicon resistor and a method of manufacturing it A polysilicon resistor and a method of manufacturing it

H - Electricity

01

C

H01C 7/00 (2006.01) H01C 17/00 (2006.01) H01L 21/02 (2006.01)

Patent

CA 2229451

A resistor has a resistor body (11) of polycrystalline silicon and electrical terminals (23, 15) arranged on and/or in the resistor body (11), so that a resistor portion (13) is formed between the terminals and produces the useful resistance of the resistor. The material of the resistor body is doped with dopants of both acceptor type and donor type. In order to block the charge carrier traps at grain boundaries to a sufficient degree and thereby give the resistor a good stability, also when it is exposed to different substances during the manufacture, the doping is made with donors in such a high concentration, that if only the donor atoms would be present in the material and substantially no acceptor atoms, the material would be to be considered as more or less heavily doped. In particular donor atoms are to be provided in the resistor body in a concentration of at least 3.1019 cm-3, in the case where the material has an average grain size of 1000 .ANG. and phosphorus is used as a dopant of donor type.

L'invention porte sur une résistance dont le corps (11) est constitué de silicium polycristallin et les bornes (23, 15) sont disposées sur et/ou dans ledit corps (11), la partie résistante (13) étant ainsi comprise entre les bornes et produisant la résistance utile du dispositif. Le matériau constitutif du corps de résistance est dopé à l'aide de dopants des types accepteurs et donneurs. Afin de bloquer suffisamment les pièges à transporteurs de charges au niveau des frontières des grains, et assurer par là une bonne stabilité à la résistance, même lorsqu'elle est exposée à différentes substances pendant sa fabrication, la concentration des donneurs est si élevée que s'ils étaient seuls présents dans le matériau sans pratiquement d'atomes accepteurs, le matériau pourrait être considéré comme plus ou moins fortement dopé. En particulier, la concentration des atomes donneurs dans le corps de résistance est d'au moins de 3?.¿10?19¿ cm?-3¿ pour une taille moyenne de grains du matériau de 1000 .ANG., alors que le dopant donneur est du phosphore.

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