A power integrated circuit

Details A power integrated circuit A power integrated circuit

H - Electricity

01

L

H01L 27/00 (2006.01) H01L 21/761 (2006.01) H01L 23/58 (2006.01) H01L 27/08 (2006.01)

Patent

CA 2166228

A monolithic assembly includes vertical power semi- conductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.

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