A process for etching gallium nitride compound based...

Details A process for etching gallium nitride compound based... A process for etching gallium nitride compound based...

H - Electricity

01

L

H01L 21/306 (2006.01)

Patent

CA 2310155

A method for wet etching a gallium nitride compound-based semiconductor is disclosed. The method uses an aqueous solution containing an oxidizing agent such as peroxydisulfate ions. The sample and solution are irradiated with visible or ultraviolet light in order to promote the etching.

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